(China (Mainland))
Product Summary
The 4N35SR2M is the general purpose optocoupler which consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package.
Parametrics
4N35SR2M absolute maximum ratings: (1)Storage Temperature: -55 to +150 ℃; (2)Operating Temperature: -55 to +100 ℃; (3)Wave solder temperature: 260 for 10 sec ℃; (4)Total Device Power Dissipation @ TA= 25℃: 250 mW; (5)Derate above 25℃: PD= 3.3 (non-M), 2.94 (-M) mW; (6)Collector-Emitter Voltage: 30 V; (7)Collector-Base Voltage: 70 V; (8)Emitter-Collector Voltage: 7V; (9)DC/Average Forward Input Current: 100 (non-M), 60 (-M) mA; (10)Reverse Input Voltage: 6V; (11)Forward Current - Peak (300μs, 2% Duty Cycle): 3A.
Features
4N35SR2M features: (1)Also available in white package by specifying -M suffix, eg. 4N25-M; (2)UL recognized (File # E90700); (3)VDE recognized (File # 94766); (4)Add option V for white package (e.g., 4N25V-M); (5)Add option 300 for black package (e.g., 4N25.300).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 4N35SR2M |
Fairchild Semiconductor |
Transistor Output Optocouplers Optocoupler Phototransistor |
Data Sheet |
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4N35SR2M_F132 |
Fairchild Semiconductor |
Transistor Output Optocouplers Optocoupl DC-In 1-Ch w/Base DC-Out 6-Pin |
Data Sheet |
Negotiable |
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